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Dimer Configuration Gallery

Si (001) Surface Fig. 1 Image of a Reconstructed Si (001)-2 × 1 Surface displaying A and B type Step Edges Fig. 1A Bulk Terminated and Reconstructed Si (001)-2 × 1 Surface Fig. 1B Step Edges on the Reconstructed Si (001)-2 × 1 Surface Fig. 2 Close-up Image of a Reconstructed Si (001)-2 × 1 Surface with Defects Silicon Ad-Dimer Orientations and Energies Fig. 2 Silicon Ad-Dimer Orientations and Energies on Reconstructed Si (001)-2 × 1 Surface Fig. 2A/B On Top of the Row Dimer Fig. 2C Stealth or C-Dimer Stealth or C-Dimers and Dimer Diffusion Fig. 3 Stealth or C-Dimer Fig. 4 Filled vs. Empty State Images of Stealth Dimer Fig. 5 Across the Rows Diffusion involving Intermediate "Stealth"/C-Dimer Two-Dimer Configurations Fig. 6 Cross Configuration Fig. 7 Filled vs. Empty State Images of a Cross Fig. 8 Tie Configuration. Fig. 9 Filled vs. Empty State Images of a Tie Fig. 10 A-Dimer Pairs, a.k.a Twins Fig. 11 Filled vs. Empty State Images of Twins Rows Fig.12 Dense and Dilute Row Fundamental Units Fig.13 Filled vs. Empty State Images of a Dilute Row Fig.14 Filled vs. Empty State Images of a Dense Row

All images included here were taken on the Si (001)-2 × 1 reconstructed surface. Unless otherwise noted, they were imaged with a +2 Volt bias on the tip; so filled electron states were sampled. Note: some of the images made with a negative tip-sample bias display the troughs as light and the rows as dark. The configuration diagrams on this page are schematic in nature and are based the following works:

References

G. Brocks and P. J. Kelly. Dynamics and Nucleation of Si Ad-dimers on the Si(100) Surface, Phys. Rev. Lett. 76, 2362-2365 (1996.)
T. Yamasaki and T. Uda. Initial Process of Si Homoepitaqxial Growth on Si(001), Phys. Rev. Lett. 76, 2949-2952 (1996).
A. van Dam, J. van Wingerden, et al., Interactions between absorbed Si dimers on Si(001), Phys. Rev. B. 54 1557-1560 (1996).
J. van Wingerden, A. van Dam, et al., Room temperature growth of submonolayers of silicon on Si(001) studied with STM, (Submitted: June 1996, Phys. Rev. B).
J. van Wingerden, A. van Dam, et al., Atomic details of step flow growth on Si(001), (Submitted: July 1996, Phys. Rev. B).
M. Uchikawa, et al. Defect-induced Si(100) dimer buckling structures studied by scanning tunneling microscopy, Surface. Sci. 357-358 (1996) 468-471.

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