Hot scanning tunneling microscope study of B type step edges and small silicon islands on Si(001), J. Vac. Sci Technol. A 13, 1506 (1995).
Chris Pearson, Michael Krueger, Robert Curtis, Brian Borovsky, Xin Shi, and Eric Ganz
We have used a scanning tunneling microscope to image step edges as well as small Si islands on the Si(001)-(2x1) reconstructed surface at temperatures up to 700 K. We count the changes in the step edge configuration and extract activation energies for the dominant processes. We also observe fluctuations in Si island size at rates that are higher than those we observe on step edges. To aid visualization of the dynamics, we display consecutive images of fluctuating islands and step edges as movies.
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growth of Si on Si(001)
Hot STM Studies of Si(001)
step edges during annealing
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Copyright 1996 by the Regents of the University of Minnesota