The Diffusion of Hydrogen on the Si(001) Surface investigated by STM Atom-Tracking, to appear in Physical Review B. Dec. 15 (1999).
Eric Hill, Byron Freelon, and Eric Ganz
The Scanning Tunneling Microscopy atom-tracking technique is used to follow the individual diffusive hops of single H and D atoms on the Si(001) surface in ultra-high vacuum. Attempt frequencies and activation energies for diffusion along the dimer row (intrarow) and between the atoms of a single Si dimer (intradimer) are extracted. For intrarow H diffusion, an activation energy of 1.75 ± 0.10 eV and an attempt frequency of 1014.5 ± 0.8 Hz are found. For intradimer H diffusion, an activation energy of 1.01 ± 0.05 eV and a low attempt frequency of 1010.3 ± 0.5 Hz are found. The ratios of H to D attempt frequencies for intradimer and intrarow diffusion are also determined.
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Copyright 1999 by the Regents of the University of Minnesota