Diffusion of Si dimers on Si(001)Surface Science 385 146-154 (1997).
M. Krueger, B. Borovsky, E. Ganz
The diffusion of Si dimers on the Si(001)-2 ×
1 surface is studied with hot scanning-tunneling microscopy and a
tracking technique in which each diffusive event is resolved. The
activation energy for diffusion of a dimer along a substrate
dimer row is found to be 1.09 ± 0.05 eV, with an attempt
frequency of 1013.2+0.6 Hz. A lower bound of
1.40 eV is placed on the activation energy for dimer
dissociation. The free energy of a dimer is observed to decrease
by 32 ± 2 meV at a site adjacent to a type-A edge.
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Copyright 1996 by the Regents of the University of Minnesota