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Electron tunneling in ErRh/sub 4/B/sub 4/.
C. P. Umbach, L. E. Toth, E. D. Dahlberg, A. M. Goldman
Physica B and C 108 p. 803 (1981).
Abstract: Thin film tunneling junctions of ErRh/sub 4/B/sub 4/ with counterelectrodes of Mg, In, Pb and Al have been formed using an artificial barrier of oxidized Er. Measurements of the tunneling characteristics indicate that the maximum value of 2 Delta /k/sub B/T/sub c/ for ErRh/sub 4/B/sub 4/ is at least 4.2. (8 References).
last modified:
10.Jun.2002
by Thomas Gredig